No.

Analyzed objects (rocks, minerals, soils, biological objects, etc.)

Analyzed elements (components, isotopes, structure, etc.)

Method

Instrumentation

1

Single-crystal semiconductive bodies (wafers)

Structure of thin epitaxial films and surface phases

Fast-moving electron diffraction

“Katun” ultrahigh-vacuum two-chamber system

2

Single-crystal semiconductive bodies (wafers), films

Distribution of doping agent concentrations

CV-method

EDK-6817 analog meter

3

Single-crystal semiconductive bodies (wafers)

Structure of surface phases, conductivity of semiconductive wafers and films on them

Slow electron diffraction, 4-probe method, scanning tunnel microscopy (GPI-300.30)

Ultrahigh-vacuum two-chamber system

4

Atomic structure of surface, chemical composition.

Slow electron diffraction, electron Auger spectroscopy; scanning tunnel microscopy, scanning tunnel spectroscopy

 “Omicron” ultrahigh-vacuum two-chamber system

5

 Structure of surface phases, chemical composition of surface

Slow electron diffraction, electron Auger spectroscopy.

 “LAS 600” ultrahigh-vacuum two-chamber system

6

Slow electron diffraction, electron Auger spectroscopy

Ñâåðõâûñîêîâàêóóìíàÿ óñòàíîâêà “Chaika” ultrahigh-vacuum two-chamber system

7

Slow electron diffraction, electron Auger spectroscopy, method of characteristics loss by electrons

Riber “LAS 600” ultrahigh-vacuum two-chamber system

8

Chemical composition of surface

Electron Auger spectroscopy

“Chaika” ultrahigh-vacuum two-chamber system

9

Any solid and liquid material

Chemical composition and structure

Optical spectroscopy

SPECORD 71 IR and  SPECORD UV-VIS spectrophotometers, spectrophotometer based on MDR-3 monochromator

10

Single-crystal semiconductive bodies (wafers)

Chemical composition of surface, structure, conductivity of semiconductive wafers and films on them

Electron Auger spectroscopy, method of characteristics loss by electrons, X-ray photoelectron spectroscopy, 4-probe method

“Varian” ultrahigh-vacuum two-chamber system

11

Single-crystal semiconductive bodies (wafers)

Measurements of concentrations of charge carriers and their mobility in semiconductors, surface structure

Hall’s method, slow electron diffraction (SED)

Ultrahigh-vacuum two-chamber system

12

Solid and liquid bodies

Surface structure

Scanning probe microscopy

Solver P47 atomic power microscope

13

Single-crystal semiconductive bodies (wafers)

Chemical composition of surface; structure, conductivity of semiconductive wafers and films on them

Electron Auger spectroscopy, method of characteristics loss by electrons, slow electron diffraction, 4-probe method

Ultrahigh-vacuum two-chamber system