Russian Academy of Sciences

Far East Branch

Automation and Management Processes Institute

Microelectronics Science and Technology Center

 

No.

Analyzed objects (rocks, minerals, soils, biological objects, etc.)

Analyzed elements (components, isotopes, structure, etc.)

Method

Instrumentation

1

Single-crystal semiconductive bodies (wafers)

Structure of thin epitaxial films and surface phases

Fast-moving electron diffraction

Katun ultrahigh-vacuum two-chamber system

2

Single-crystal semiconductive bodies (wafers), films

Distribution of doping agent concentrations

CV-method

EDK-6817 analog meter

3

Single-crystal semiconductive bodies (wafers)

Structure of surface phases, conductivity of semiconductive wafers and films on them

Slow electron diffraction, 4-probe method, scanning tunnel microscopy (GPI-300.30)

Ultrahigh-vacuum two-chamber system

4

Atomic structure of surface, chemical composition.

Slow electron diffraction, electron Auger spectroscopy; scanning tunnel microscopy, scanning tunnel spectroscopy

Omicron ultrahigh-vacuum two-chamber system

5

Structure of surface phases, chemical composition of surface

Slow electron diffraction, electron Auger spectroscopy.

LAS 600 ultrahigh-vacuum two-chamber system

6

Slow electron diffraction, electron Auger spectroscopy

Chaika ultrahigh-vacuum two-chamber system

7

Slow electron diffraction, electron Auger spectroscopy, method of characteristics loss by electrons

Riber LAS 600 ultrahigh-vacuum two-chamber system

8

Chemical composition of surface

Electron Auger spectroscopy

Chaika ultrahigh-vacuum two-chamber system

9

Any solid and liquid material

Chemical composition and structure

Optical spectroscopy

SPECORD 71 IR and SPECORD UV-VIS spectrophotometers, spectrophotometer based on MDR-3 monochromator

10

Single-crystal semiconductive bodies (wafers)

Chemical composition of surface, structure, conductivity of semiconductive wafers and films on them

Electron Auger spectroscopy, method of characteristics loss by electrons, X-ray photoelectron spectroscopy, 4-probe method

Varian ultrahigh-vacuum two-chamber system

11

Single-crystal semiconductive bodies (wafers)

Measurements of concentrations of charge carriers and their mobility in semiconductors, surface structure

Halls method, slow electron diffraction (SED)

Ultrahigh-vacuum two-chamber system

12

Solid and liquid bodies

Surface structure

Scanning probe microscopy

Solver P47 atomic power microscope

13

Single-crystal semiconductive bodies (wafers)

Chemical composition of surface; structure, conductivity of semiconductive wafers and films on them

Electron Auger spectroscopy, method of characteristics loss by electrons, slow electron diffraction, 4-probe method

Ultrahigh-vacuum two-chamber system

 

Chief of analytical division V.G. Lifshits

Address: 5, Radio St., Vladivostok 690041

Tel.: (4232) 31-06-96

Fax: (4232) 31-04-52

E-mail: lifshits@iacp.dvo.ru